Composite
Transistors
XN1871
Silicon N-channel junction FET
Unit: mm
For amplification of the low frequency
2.
8 -0.
3 0.
65±0.
15
+0.
2 +0.
25
1.
5 -0.
05 5
0.
65±0.
15 1
0.
95
2.
9 -0.
05
q
q
Two elements incorporated into one package.
(Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1
+0.
2
4
0.
95
3
2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06
+0.
1
1.
1 -0.
1
q
2SK198 × 2 elements
0.
8
s Basic Part Number of Element
+0.
2
s Absolute Maximum Ratings
Parameter Drain to source voltage Rating Gate to drain voltage of Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSX VGDO ID IG PT Tch Tstg
(Ta=2...