Composite
Transistors
XN1872
Silicon N-channel • Enhancement MOS FET
Unit: mm
For switching
2.
8 -0.
3 0.
65±0.
15
+0.
2 +0.
25
1.
5 -0.
05 5
0.
65±0.
15 1
0.
95
2.
9 -0.
05
q
q
Two elements incorporated into one package.
(Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1
+0.
2
4
0.
95
3
2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06
+0.
1
1.
1 -0.
1
q
2SK621 × 2 elements
0.
8
s Basic Part Number of Element
+0.
2
s Absolute Maximum Ratings
Parameter Drain to source voltage Rating Gate to source voltage of element Drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSO ID IDM PT Tch Tstg
(Ta=25˚C)
Ratings 50 8 100 200 ...