Composite
Transistors
XN4401
Silicon
PNP epitaxial planer
transistor
Unit: mm
For general amplification
0.
65±0.
15 6 0.
95
2.
8 –0.
3
+0.
2 +0.
25
1.
5 –0.
05
0.
65±0.
15 1
0.
3 –0.
05
2.
9 –0.
05
q q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1
+0.
2
5
2
0.
95
4
3
q
2SB709A × 2 elements
1.
1–0.
1
0.
4±0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings –60 –50 –7 –1...