Composite
Transistors
XN6537
Silicon
NPN epitaxial planer
transistor
Unit: mm
For wide-band low-noise amplification
0.
65±0.
15 6
2.
8 –0.
3
+0.
2 +0.
25
1.
5 –0.
05
0.
65±0.
15 1
0.
3 –0.
05
0.
95
2.
9 –0.
05
q q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1
+0.
2
5
2
0.
95
4
3
q
2SC3110 × 2 elements
1.
1–0.
1
0.
4±0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings ...