Composite
Transistors
XN6A554
Silicon
NPN epitaxial planer
transistor
Unit: mm
For high speed switching
2.
8 –0.
3 0.
65±0.
15 6
0.
95
+0.
2
+0.
25 1.
5 –0.
05
0.
65±0.
15 1
0.
3 –0.
05
0.
5 –0.
05
2.
9 –0.
05
q q q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
Low VCE(sat).
1.
9±0.
1
+0.
2
s Features
5
2
0.
95
4
3
s Basic Part Number of Element
q
1.
1–0.
1
0.
4±0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC...