Composite
Transistors
XP0111M
Silicon
PNP epitaxial planer
transistor
Unit: mm
2.
1±0.
1 0.
425 1.
25±0.
1 0.
425
0.
2±0.
05 0.
12 – 0.
02
+0.
05
For switching/digital circuits
0.
65
s Features
q q
Two elements incorporated into one package.
(Emitter-coupled
transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1
1 2 3
5
0.
65
4
0.
9± 0.
1
q
UN211M × 2 elements
0.
7±0.
1
s Basic Part Number of Element
0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C...