P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.
28 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Features Low on-state resistance : Rds (on) = 0.
15 Ω ( Vgs = -10V ) Rds (on) =...

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