Composite
Transistors
XP5553
Silicon
NPN epitaxial planer
transistor
Unit: mm
0.
425 1.
25±0.
1 0.
425
0.
2±0.
05
For amplification of the low frequency
2.
1±0.
1
0.
65
q q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1
s Features
0.
65
1 2 3
6 5 4
0.
9±0.
1
q
2SD1149 × 2 elements
0.
7±0.
1
0 to 0.
1
0.
2±0.
1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 100 100 15 20...