Composite
Transistors
XP5A554
Silicon
NPN epitaxial planer
transistor
Unit: mm
0.
425 1.
25±0.
1 0.
425
0.
2±0.
05
For high speed switching
2.
1±0.
1
0.
65
q q q
For high speed switching.
Low collector to emitter saturation voltage VCE(sat).
Two elements incorporated into one package.
2.
0±0.
1
s Features
0.
65
1 2 3
6 5 4
0.
2
0.
9±0.
1
s Basic Part Number of Element
q
0 to 0.
1
2SC3757 × 2 elements
1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2)
0.
7±0.
1
0.
2±0.
1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 40 40 5 100 300 15...