Composite
Transistors
XP6435
Silicon
PNP epitaxial planer
transistor
Unit: mm
0.
425 1.
25±0.
1 0.
425
0.
2±0.
05
For high-frequency amplification
2.
1±0.
1
0.
65
q q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1
s Features
0.
65
1 2 3
6 5 4
0.
9±0.
1
q
2SA1022 × 2 elements
0.
7±0.
1
0 to 0.
1
0.
2±0.
1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg
(Ta=25˚C)
Ratings –30 –20 –5 –30 150 150 –55 to +150 Unit V V V ...