Photo
transistors
PNZ123S
Silicon
NPN Photo
transistor
Unit : mm
For optical control systems
4.
1±0.
3 2.
0±0.
2 12.
5 min.
ø3.
0±0.
2
Can be combined with LN62S to form an photo interrupter Features
High sensitivity Low dark current Fast response : tr = 3.
5 µs (typ.
) Small size (ø 3) ceramic package
ø0.
3±0.
05 ø0.
45±0.
05
0.
9±0.
15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C
2
1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25˚C...