| Part Number | VN0610LL |
| Manufacturer | Vishay Siliconix |
| Title | N-Channel MOSFET |
| Description | VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN10LLS VN0605T VN0610LL VN2222LL... |
| Features |
BENEFITS
D Low On-Resistance: 2.5 W D Low Threshold: 2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output
Leakage
D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffering D High-Speed Circuits D Low Error Voltage
APPLICATIONS
D Direct Lo...
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| File Size | 41.23KB |
| Datasheet |
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VN0610L : ~Siliconix .,1;11 incorporated VN0610L, VN10KE, VN10KM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE TO-206AC (TO-52) BOTTOM VIEW VN0610L 60 5 0.27 TO-92 VN10KE 60 5 0.17 TO-206AC VN10KM 60 5 0.31 TO-237 Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN & TAB 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0610L VN10KE VN10KM UNITS Drain-Source Voltage Gate-Source Voltage 2 Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Powe.
VN0610L : www.DataSheet4U.com .
VN0610LL : MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement 3DRAIN VN0610LL 2 GATE MAXIMUM RATINGS ® 1 SOURCE Rating Symbol Value Unit Drain – Source Voltage Drain – Gate Voltage (RGS = 1 MΩ) Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 60 60 ± 20 ± 40 190 1000 400 3.2 Vdc Vdc Vdc Vpk mAdc mW mW/°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS TJ, Tstg – 55 to +150 °C Characteristics Symbol Max Unit Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from ca.
VN0610LL : www.DataSheet4U.com VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors VN0610LL / VN10LM FEATURES CORPORATION • Low rDS(on) 5Ω • Switching • Amplification PIN CONNECTIONS ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC VN0610LL Plastic TO-92 VN10LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS BOTTOM VIEW BOTTOM VIEW 3 TO-92 (TO-226AA) 2 1 1 2 3 1. SOURCE 2. GATE 3. DRAIN TO-237 1 2 3 1. SOURCE 2. GATE 3. TAB-DRAIN CD5 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL VDS VGS ID IDM PD TJ, Tstg TL PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse.
VN0610LL : VN0610LL FET Transistor N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage (RGS = 1 MΩ) Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds Symbol VDSS VDGR Value 60 60 Unit Vdc Vdc VGS VGSM ID IDM PD TJ, Tstg ± 20 ± 40 190 1000 400 3.2 −55 to +150 Vdc Vpk mAdc mW mW/°C °C Symbol RθJA TL Max 312.5 300 Unit °C/W °C http://onsemi.com 1 23 CASE 29−11, S.