MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN2406L/D
TMOS FET
Transistor
N–Channel — Enhancement
3 DRAIN
2 GATE
VN2406L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C Derate above 25°C
VDSS VDGR
240 60
Vdc Vdc
VGS VGSM
± 20 ± 40
Vdc Vpk
ID 200 mAdc
IDM 500 mAdc
PD 350 mW 2.
8 mW/°C
Operating and Storage Temperature THERMAL CHARACTERISTICS
TJ, Tstg
—
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead T...