VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank.
it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.
3V only power supply.
It is packaged in JEDEC standard pinout and standard plastic TSOP package.
Features • Single 3.
3V ( ± 0.
3V ) power supply • High speed clock cycle time : 8/10ns • Fully synchronous with all signals referenced to a positive clock edge • Programmable CAS Iatency (2,3) • Programmable burst length (1,2,4,8,&Full page) • Programmable wrap sequence (Sequential/Interleave) • Automatic precharge and controlled precha...

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