Part Number
|
TVR1B |
Manufacturer
|
Toshiba Semiconductor |
Description
|
TOSHIBA Fast Recovery Diode Silicon Diffused Type |
Published
|
Apr 16, 2005 |
Detailed Description
|
TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
U...
|
Datasheet
|
TVR1B
|
Overview
TVR1B,TVR1G,TVR1J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
Unit: mm Average Forward Current: IF (AV) = 0.
5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.
0 µs
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics TVR1B Repetitive peak reverse voltage TVR1G TVR1J Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range IF (AV) IFSM Tj Tstg VRRM Symbol Rating 100 400 600 0.
5 10 (50 Hz) -40~125 -40~125 A A °C °C V Unit
JEDEC JEITA TOSHIBA
― ― 3-3C1A
Electrical Characteristics (Ta = 25°C)
Characteristics...
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