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Part Number
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TVR4N |
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Manufacturer
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Toshiba Semiconductor |
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Description
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TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
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Published
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Apr 16, 2005 |
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Detailed Description
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TVR4J,TVR4N
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recov...
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Datasheet
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TVR4N
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Overview
TVR4J,TVR4N
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.
2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
· · · ·
Maximum Ratings (Ta = 25°C)
Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.
2 100 (50 Hz) -40 to 150 -40 to 150 Unit V A A °C °C
Average forward current (Ta = 55°C ) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 3-4B1A
Electrical Characteristics (Ta =...
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