TPV596 SILICON N-CHANNEL RF POWER MOSFET DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz.
PACKAGE STYLE 280 4L STUD FEATURES: • PG = 12 dB min.
at 0.
5 W/ 860 MHz • Common Emitter • Omnigold™ Metallization System MAXIMUM RATINGS IC VCE TJ TSTG PDISS 0.
7 A 24 V -65 °C to +200 °C -65 °C to +150 °C 8.
75 W @ TC = 25 C NONE O 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVCER BVEBO ICBO hFE COB PG IC = 20 mA TC = 25 C O TEST CONDITIONS IC = 1.
0 mA IC = 20 mA IE = 0.
25 mA VCB = 28 V IC = 100 mA VCB = 28 V VCE = 20 V IE = 0.
22 A VCE = 5.
0 V f = 1.
0 MHz f = 860 MHz RBE = 10 Ω MINIMUM 24 45 50 3.
5 TYPICAL MA...

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