TPV8100B TPV8100B
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
• Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization • Emitter Ballasting
PACKAGE STYLE .
438X.
450 4LFL
MAXIMUM RATINGS
IC VCER PDISS TJ TSTG θJC 12 A 40 V RBE = 10 Ω 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.
8 C/W
O O O O O O
1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON)
CHARACTERISTICS
SYMBOL
BVCER BVCBO BVEBO ICER hFE Gp η Pout IC = 10 mA IC = 20 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V
TC = 25 C
O
TEST...