TN2510
N-Channel Enhancement-Mode Vertical DMOS FET
Features
► Low threshold (2.
0V max.
) ► High input impedance ► Low input capacitance (125pF max.
) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar
transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structu...