TN6725A
Discrete Power & Signal Technologies
TN6725A
CB
E
TO-226
NPN Darlington
Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A.
Sourced from Process 05.
See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Value 50 60 12 1.
2 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These rati...