TPR175
NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
DESCRIPTION:
The ASI TPR175 is a common base
transistor Designed for pulsed systems in the frequency band 1030-1090 MHz.
PACKAGE STYLE
FEATURES:
• Common Base • Internal Matching Network • PG = 8.
0 dB at 175 W/1090 MHz • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCES VEBO PDISS TJ TSTG θJC 12.
5 A 55 V 3.
5 V 388 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.
45 °C/W
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS
SYMBOL
BVCES BVEBO hFE PG VSRW ηC IC = 20 mA
TC = 25 °C NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55 3.
5
UNITS
V V ---
IE = 5.
0 mA VCE = 5.
0 V VCE = 50 V IC = 20 mA POUT = 175 W f = 1090 MHz
10 8.
0 9.
0 00:1...