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Part Number
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TLP722 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Photocoupler |
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Published
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Apr 16, 2005 |
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Detailed Description
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TLP722
TENTATIVE
TOSHIBA Photocoupler Photo−Diode
TLP722
Unit in mm The TOSHIBA TLP722 consists of a photo−diode opti...
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Datasheet
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TLP722
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Overview
TLP722
TENTATIVE
TOSHIBA Photocoupler Photo−Diode
TLP722
Unit in mm The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4).
TLP722: Single circuit · · · · · · · Cathode−anode voltage: 30V (max) Current transfer ratio: 0.
1% (min) Input / output isolation voltage: 4000Vrms (min) Operating temperature range: −55~100°C Storage temperature range: −55~125°C UL recognized: UL1577, E67349 VDE approved: VDE0884 Maximum operating insulation voltage: 890VPK Maximum permissible over voltage: 8000VPK
(Note): When a VDE0884 approved type is needed, please designate the “ Option (D4) ” · · SEMKO approved product: SS...
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