Part Number
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TIM6472-12UL |
Manufacturer
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Toshiba Semiconductor |
Description
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MICROWAVE POWER GaAs FET |
Published
|
Apr 16, 2005 |
Detailed Description
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FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 41.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4G...
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Datasheet
|
TIM6472-12UL
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 41.
5dBm at 6.
4GHz to 7.
2GHz ・HIGH GAIN
G1dB= 9.
5dB at 6.
4GHz to 7.
2GHz ・LOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 30.
5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-12UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 2.
6A f = 6.
4 to 7.
2GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 30.
5dBm, ∆f= 5MHz
(Singl...
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