TIP102 —
NPN Epitaxial Silicon Darlington
Transistor
December 2014
TIP102
NPN Epitaxial Silicon Darlington
Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP107
Equivalent Circuit C
B
1 TO-220 1.
Base 2.
Collector 3.
Emitter
R1
≅Ω ≅Ω
R2 E
Ordering Information
Part Number TIP102
TIP102TU
Top Mark TIP102 TIP102
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge)
Packing Method Bulk Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum rat...