TIP105 / TIP107 —
PNP Epitaxial Silicon Darlington
Transistor
December 2014
TIP105 / TIP107
PNP Epitaxial Silicon Darlington
Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)
• Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP102
1 TO-220 1.
Base 2.
Collector 3.
Emitter
Equivalent Circuit C
B
R1
≅Ω ≅Ω
R2 E
Ordering Information
Part Number TIP105
TIP105TU TIP107
TIP107TU
Top Mark TIP105 TIP105 TIP107 TIP107
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gaug...