TIP105/TIP106/TIP107 —
PNP Epitaxial Silicon Darlington
Transistor
TIP105/TIP106/TIP107
PNP Epitaxial Silicon Darlington
Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.
) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102
Equivalent Circuit C
B
1 TO-220 1.
Base 2.
Collector 3.
Emitter
R1
R1 @ 10kW R2 @ 0.
6kW
R2 E
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol VCBO
VCEO
VEBO IC ICP IB PC
TJ TSTG
Parameter
Collector-Base Voltage
: TIP105 : TIP106 : TIP107
Collector-Emitter Voltage : TIP105 : TIP1...