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TIP107

PNP Epitaxial Silicon Darlington Transistor

Description

TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor December 2014 TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation ...

Fairchild Semiconductor

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