TIP110 / TIP111 / TIP112 —
NPN Epitaxial Silicon Darlington
Transistor
November 2014
TIP110 / TIP111 / TIP112
NPN Epitaxial Silicon Darlington
Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• Complementary to TIP115 / TIP116 / TIP117 • High DC Current Gain:
hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use
Ordering Information
Equivalent Circuit C
B
1 TO-220 1.
Base 2.
Collector 3.
Emitter
R1
≅Ω ≅Ω
R2 E
Part Number TIP110
TIP110TU TIP111TU
TIP112 TIP112TU
Top Mark TIP110 TIP110 TIP111 TIP112 TIP112
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L ...