TIP142T TIP147T
Complementary power Darlington
transistors
Features
■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
The resulting
transistors show exceptional high gain performance coupled with very low saturation voltage.
TAB
3 2 1
TO-220
Figure 1.
Internal schematic diagrams
R1 typ.
= 5 kΩ R2 typ.
= 60 Ω
R1 typ.
= 8 kΩ R2 typ.
= 100 Ω
Table 1.
Device summary
Part number
Marking
TIP142T TIP147T
TIP142T TIP147T
Polarity
NPN PNP
Package TO-220
May 2010
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