TISP2180 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK NOVEMBER 1986 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘2180 V(Z) V 145 V(BO) V 180 TO-220 PACKAGE (TOP VIEW) A(T) C(G) B(R) 1 2 3 q Planar Passivated Junctions Low Off-State Current 10 µA Rated for International Surge Wave Shapes WAVE SHAPE 8/20 µs 10/160 µs 10/560 µs 0.
2/310 µs 10/700 µs 10/1000 µs STANDARD ANSI C62.
41 FCC Part 68 FCC Part 68 RLM 88 FTZ R12 VDE 0433 CCITT IX K17/K20 REA PE-60 ITSP A 150 60 45 38 50 50 50 50 Pin 2 is in electrical co...

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