TISP3082L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1990 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3082L V(Z) V 58 V(BO) V 82 q Planar Passivated Junctions Low Off-State Current 10 µA Rated for International Surge Wave Shapes WAVE SHAPE 8/20 µs 10/160 µs 10/560 µs 0.2/310 µs 10/700 µs 10/1000 µs STANDARD ANSI C62.41 FCC Part 68 FCC Part 68 RLM 88 FTZ R12 VDE 0433 CCITT IX K17/K20 REA PE-60 ITSP A 100 60 45 38 50 50 50 35 q device symbol description The TISP3082L is designed specifically for te...

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