TISP4125F3, TISP4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘4125F3 ‘4150F3 ‘4180F3 VDRM V 100 120 145 V(BO) V 125 150 180 D PACKAGE (TOP VIEW) T T T T 1 2 3 4 8 7 6 5 R R R R MDXXAI Specified ratings require the connection of pins 1, 2, 3 and 4 for the T terminal.
SL PACKAGE (TOP VIEW) q Planar Passivated Junctions Low Off-State Current 10 µA Rated for International Surge Wave Shapes WAVE SHAPE 2/10 µs 8/20 µs 10/160 µs 10/560 µs 0.
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