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TGF4250-EEU
4.
8 mm Discr ete HFET
q q q q q q
PHOTO ENLARGEMENT
4800 µm x 0.
5 µm HFET Nominal Pout of 34- dBm at 8.
5- GHz Nominal Gain of 8.
5- dB at 8.
5- GHz Nominal PAE of 53% at 8.
5 - GHz Suitable for high reliability applications
4250
0,572 x 1,334 x 0,102 mm (0.
023 x 0.
053 x 0.
004 in.
)
DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.
8 mm discrete GaAs Heterostructure Field Ef fect
Transistor (HFET) designed for high ef ficiency power applications up to 10.
5- GHz in Class A and Class AB operation.
Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
Bond pad and backside...