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Part Number
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SML100A9 |
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Manufacturer
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Seme LAB |
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Description
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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Published
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Apr 16, 2005 |
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Detailed Description
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SML100A9
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.0...
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Datasheet
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SML100A9
|
Overview
SML100A9
TO–3 Package Outline.
Dimensions in mm (inches)
25.
15 (0.
99) 26.
67 (1.
05) 10.
67 (0.
42) 11.
18 (0.
44) 1.
52 (0.
06) 3.
43 (0.
135)
6.
35 (0.
25) 9.
15 (0.
36)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1.
47 (0.
058) 1.
60 (0.
063)
1
2
3 (case) 3.
84 (0.
151) 4.
09 (0.
161) 7.
92 (0.
312) 12.
70 (0.
50)
VDSS 1000V 9A ID(cont) RDS(on) 1.
100Ω
• Faster Switching • Lower Leakage • TO–3 Hermetic Package
38.
61 (1.
52) 39.
12 (1.
54)
29.
9 (1.
177) 30.
4 (1.
197)
Pin 1 – Gate
16.
64 (0.
655) 17.
15 (0.
675)
Pin 2 – Source
Case – Drain
D
22.
23 (0.
875) max.
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, in...
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