Part Number
|
SML100H11 |
Manufacturer
|
Seme LAB |
Description
|
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Published
|
Apr 16, 2005 |
Detailed Description
|
SML100H11
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 ...
|
Datasheet
|
SML100H11
|
Overview
SML100H11
TO–258 Package Outline.
Dimensions in mm (inches)
17.
65 (0.
695) 17.
39 (0.
685) 6.
86 (0.
270) 6.
09 (0.
240) 1.
14 (0.
707) 0.
88 (0.
035)
17.
96 (0.
707) 17.
70 (0.
697)
13.
84 (0.
545) 13.
58 (0.
535)
1 2 3
4.
19 (0.
165) 3.
94 (0.
155) Dia.
21.
21 (0.
835) 20.
70 (0.
815)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 1000V 11A ID(cont) RDS(on) 0.
880Ω
3.
56 (0.
140) BSC
19.
05 (0.
750) 12.
70 (0.
500)
5.
08 (0.
200) BSC 1.
65 (0.
065) 1.
39 (0.
055) Typ.
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• Faster Switching • Lower Leakage • TO–258 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET ef...
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