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Part Number
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SML60H20 |
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Manufacturer
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Seme LAB |
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Description
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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Published
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Apr 16, 2005 |
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Detailed Description
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SML60H20
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (...
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Datasheet
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SML60H20
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Overview
SML60H20
TO–258 Package Outline.
Dimensions in mm (inches)
17.
65 (0.
695) 17.
39 (0.
685) 6.
86 (0.
270) 6.
09 (0.
240) 1.
14 (0.
707) 0.
88 (0.
035)
17.
96 (0.
707) 17.
70 (0.
697)
13.
84 (0.
545) 13.
58 (0.
535)
1 2 3
4.
19 (0.
165) 3.
94 (0.
155) Dia.
21.
21 (0.
835) 20.
70 (0.
815)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 600V 20A ID(cont) RDS(on) 0.
270Ω
3.
56 (0.
140) BSC
19.
05 (0.
750) 12.
70 (0.
500)
5.
08 (0.
200) BSC 1.
65 (0.
065) 1.
39 (0.
055) Typ.
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• Faster Switching • Lower Leakage • TO–258 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effe...
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