Part Number
|
SML60W32 |
Manufacturer
|
Seme LAB |
Description
|
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Published
|
Apr 16, 2005 |
Detailed Description
|
SML60W32
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS...
|
Datasheet
|
SML60W32
|
Overview
SML60W32
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 600V 31.
5A ID(cont) RDS(on) 0.
170Ω
• Faster Switching • Lower Leakage • TO–267 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage G...
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