Part Number
|
SM12G45 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE |
Published
|
Apr 16, 2005 |
Detailed Description
|
SM12G45,SM12J45,SM12G45A,SM12J45A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,...
|
Datasheet
|
SM12G45
|
Overview
SM12G45,SM12J45,SM12G45A,SM12J45A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,SM12J45A
AC POWER CONTROL APPLICATIONS
Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.
M.
S On−State Current l High Commutating (dv / dt) : IT (RMS) = 12A
MAXIMUM RATINGS
CHARACTERISTIC SM12G45 SM12G45A SM12J45 SM12J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg
2
UNIT
Repetitive Peak Off−State Voltage
V
R.
M.
S On−State Current (Full Sine Waveform Tc = 98°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value (t = 1~10ms) Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Aver...
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