DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B300Y
NPN microwave power
transistor
Product specification Supersedes data of June 1992 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output matching networks for an easy circuit design.
APPLICATIONS • Common base class-C wideband amplifiers operating under pulse...