RN1107~1109
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1107 RN1108 RN1109
R1 (kΩ) 10 22 47
R2 (kΩ) 47 47 22
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN1107~1109 RN1107~1109 RN1107 Emitter-base voltage RN1108 RN1109 Collector current Collector power dissipation Junction temperature Storage temperature range RN1107~110...