RN1910,RN1911
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1910,RN1911
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2910, RN2911 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC P C* Jj Tstg Rating 50 50 5 100 200 150 −55~1...