RN2110,RN2111
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
RN2110,RN2111
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1110, RN1111 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 2.
4mg
― ― 2−2H1A
Elect...