Semiconductor
RFL1P08, RFL1P10
1A, -80V and -100V, 3.
65 Ohm, P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA9400.
July 1998
Features
• 1A, -80V and -100V • rDS(ON) = 3.
65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device
Or...