RFP10P15
Data Sheet October 1999 File Number 1595.
2
-10A, -150V, 0.
500 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect
transistor is designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA9404.
Features
• -10A, -150V • rDS(ON) = 0.
500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature ...