RFP12N10L
Data Sheet July 1999 File Number
1512.
3
12A, 100V, 0.
200 Ohm, Logic Level, N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate power field effect
transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09526.
Features
• 12A, 100V • rDS(ON) = 0.
200Ω • Design Optimized for 5V Gate Drives...