RFP2N12L
Data Sheet April 1999 File Number
2874.
2
2A, 120V, 1.
750 Ohm, Logic Level, N-Channel Power MOSFET
The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect
transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09528.
Features
• 2A, 120V • rDS(ON) = 1.
750Ω • Design Optimized for 5V Gate ...