RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet November 1999 File Number 4044.
3
11A, 60V, 0.
107 Ohm, Logic Level, N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay drivers.
These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA49158.
Features
• 11A, 60V • rDS(ON) = 0.
107Ω • Temperature Compensati...