RF2126

RF2123 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

RF2125 : The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz. It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. Optimum Techno.

RF2125P : The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz. It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead plastic package with a backside ground. The device is selfcontained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. 3.90 ± 0.10 0.4.

RF2127 : The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 1900MHz, with over 100mW transmitted power. It will also function as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. Optimum Technology Matching® Applied Si BJT üGaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS VCC2 1 GND1 2 PD 3 RF IN 4 BIAS CIRCUITS 8 VCC1 7 RF OUT 6 RF OUT 5 GND2 0.16.

RF2128 : The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1900MHz and 2200MHz, with over 100mW transmitted power, or as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. .315 .305 .166 SQ 1 .050 .057 MAX .004 .017 .000 .013 4°MAX 0°MIN .180 SQ MAX Metal lid and base, .

RF2128P :
    • PCS Communication Systems • 2.5GHz ISM Band Applications • Wireless LANs RF2128P

  
 • Commercial and Consumer Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS
   The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1900MHz and 2200MHz, with .

RF2129 : The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum transmitters. The device is packaged in an 8-lead plastic package with a backside ground and is self-contained with the exception of the output matching network and power supply feed line. .196 .189 8°MAX 0°MIN .157 .150 1 .019 .014 .244 .230 .050 .035 .010 .016 .007 .010 .004 .061 .055 EXPOSED HEATSINK .123 .107 .087 .071 Optimum Technology Ma.