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RA08H1317M

Part Number RA08H1317M
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon RF Power Modules
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M 135-175MHz 8W 12.5V ...
Datasheet RA08H1317M





Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M 135-175MHz 8W 12.
5V PORTABLE/MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.
5-volt portable/ mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 2.
5V (minimum), output power and drain current increases subs...






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