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RA30H1317M

Part Number RA30H1317M
Manufacturer Mitsubishi Electric Semiconductor
Description RF MOSFET MODULE
Published Apr 16, 2005
Detailed Description ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF MOSFET MODULE RA30H1317M RoHS Compliance , 1...
Datasheet RA30H1317M




Overview
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF MOSFET MODULE RA30H1317M RoHS Compliance , 135-175MHz 30W 12.
5V 2 Stage Amp.
For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 3.
5V (minimum), output power and drain current increases subs...






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